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PDF CM800HC-66H Data sheet ( Hoja de datos )

Número de pieza CM800HC-66H
Descripción HIGH POWER SWITCHING USE INSULATED TYPE
Fabricantes Mitsubishi Electric 
Logotipo Mitsubishi Electric Logotipo



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MITSUBISHI HVIGBT MODULES
CM800HC-66H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM800HC-66H
q IC ................................................................... 800A
q VCES ....................................................... 3300V
q Insulated Type
q 1-element in a Pack
q AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.1
130±0.5
114±0.1
57±0.1
4 - M8 NUTS
C
CM E
C
EG
C
E
CC
C
G
E
EE
CIRCUIT DIAGRAM
3 - M4 NUTS
10.65±0.2
48.8±0.3
10.35±0.2
screwing depth
min. 7.7
61.5±0.3
18±0.2
6 - φ7±0.1MOUNTING HOLES
screwing depth
min. 16.5
5.2±0.2
40±0.3
15±0.2
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005

1 page




CM800HC-66H pdf
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
103
7 VGE = 0V, Tj = 25°C
5 f = 100kHz
3
2
Cies
102
7
5
3
2
101 Coes
7
5
3 Cres
2
10100-1 2 3 5 7100 2 3 5 7101 2 3 5 7102
COLLECTOR-EMITTER VOLTAGE (V)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
2.5
VCC = 1650V, VGE = ±15V
RG(on) = RG(off) = 2.5
Tj = 125°C, Inductive load
2
Eon
1.5
Eoff
1
Erec
0.5
0
0
400
800
1200
1600
COLLECTOR CURRENT (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 1650V, IC = 800A
Tj = 25°C
16
12
8
4
0
02468
GATE CHARGE (µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
4
VCC = 1650V, IC = 800A
VGE = ±15V
Tj = 125°C, Inductive load
Eon
3
2
Eoff
1
Erec
0
0 5 10 15 20
GATE RESISTANCE ()
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005

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