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Datasheet GI03N70 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GI03N70 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/01/05 REVISED DATE :
GI03N70
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 4.0 3.3A
The GI03N70 is specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter application |  GTM | mosfet |
GI0 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GI01L60 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/08/19 REVISED DATE :
GI01L60
Description Features
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 12 1A
The GI01L60 (through-hole version) is available for low-profile applications and suited for AC/DC converters. *Rep GTM mosfet | | |
| 2 | GI01N60 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product
ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B
GI01N60
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 8 1.6A
The GI01N60 provide the designer with the best combination of fast switching. The through-hole version (TO-251) is available for low GTM mosfet | | |
| 3 | GI03N70 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/01/05 REVISED DATE :
GI03N70
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 4.0 3.3A
The GI03N70 is specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter application GTM mosfet | | |
| 4 | GI08P10 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/02/21 REVISED DATE :
GI08P10
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-100V 200m -8A
The GI08P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan GTM mosfet | | |
| 5 | GI09N20 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/06/27 REVISED DATE :
GI09N20
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
200V 380m 8.6A
The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan GTM mosfet | |
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