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What is GE02N60?

This electronic component, produced by the manufacturer "GTM", performs the same function as "N-CHANNEL ENHANCEMENT MODE POWER MOSFET".


GE02N60 Datasheet PDF - GTM

Part Number GE02N60
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturers GTM 
Logo GTM Logo 


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Pb Free Plating Product
ISSUED DATE :2005/01/27
REVISED DATE :2005/12/12B
GE02N60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
600V
9
2A
Description
The GE02N60 provide the designer with the best combination of fast switching.
The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for
DC-DC, DC-AC converters for telecom, industrial and consumer environment.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
EAS
IAR
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAR
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
600
±20
2
1.26
6
39
0.31
200
2
2
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Value
3.2
62
Unit
/W
/W
GE02N60
Page: 1/5

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GE02N60 equivalent
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ISSUED DATE :2005/01/27
REVISED DATE :2005/12/12B
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GE02N60
Page: 5/5


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Part NumberDescriptionMFRS
GE02N60The function is N-CHANNEL ENHANCEMENT MODE POWER MOSFET. GTMGTM

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