G9012 Datasheet PDF - GTM
Part Number | G9012 | |
Description | PNP EPITAXIAL TRANSISTOR | |
Manufacturers | GTM | |
Logo | ||
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G9012
PNP EPITAXIAL TRANSISTOR
Description
The G9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Package Dimensions
D
E
S1
TO-92
ISSUED DATE :2004/11/18
REVISED DATE :
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCEO
Min.
-40
-20
BVEBO
ICBO
IEBO
-5
-
-
VCE(sat)
VBE(sat)
VBE(on)
-
-
-
hFE1
hFE2
fT
112
40
100
Cob -
Ta = 25
Typ.
-
-
-
-
-
-
-
-
180
-
-
-
Max.
-
-
-
-100
-100
-0.6
-1.2
-0.9
300
-
-
8
Classification Of hFE1
Rank
hFE1
G
112 - 166
H
144 - 202
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
-40
-20
-5
-500
625
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=-100uA , IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-25V, IE=0
VEB=-3V, IC=0
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
VCE=-1V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
L
176 - 300
1/2
|
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for G9012 electronic component. |
Information | Total 2 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ G9012.PDF Datasheet ] |
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