G8551 Datasheet PDF - GTM
Part Number | G8551 | |
Description | PNP EPITAXIAL TRANSISTOR | |
Manufacturers | GTM | |
Logo | ||
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CORPORATION ISSUED DATE :2004/12/27
REVISED DATE :
G8551
PNP EPITAXIAL TRANSISTOR
Description
The G8551 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
Features
*High Collector current (IC: 1.5A)
*Complementary to G8051
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25 ,unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
-40
Collector to Emitter Voltage
VCEO
-25
Emitter to Base Voltage
VEBO
-6
Collect Current
IC -1.5
Base Current
IB -0.5
Junction Temperature
Tj +150
Storage Temperature Range
TsTG
-55 ~ +150
Total Power Dissipation
PD 1
Unit
V
V
V
A
A
W
Electrical Characteristics(Ta = 25
Symbol
Min.
Typ.
BVCBO
-40 -
BVCEO
-25 -
BVEBO
-6 -
ICBO
--
IEBO
--
*VCE(sat)
--
*VBE(sat)
--
*VBE(on)
--
*hFE1
45 -
*hFE2
120 -
*hFE3
40 -
fT 100 -
Cob - 9
,unless otherwise specified)
Max.
Unit
Test Conditions
- V IC=-100uA
- V IC=-2mA
- V IE=-100uA
-100
nA VCB=-35V
-100
nA VBE=-6V
-0.5 V lC=-800mA, IB=-80mA
-1.2 V lC=-800mA, IB=-80mA
-1 V VCE=-1V, IC=-10mA
- VCE=-1V, IC=-5mA
500 VCE=-1V, IC=-100mA
- VCE=-1V, IC=-800mA
-
MHz
VCE=-10V, IC=-50mA, f=100MHz
- pF VCB=-10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Classification Of hFE1
Rank
C
Range
120 ~ 200
D
160 ~ 320
E
250 ~ 500
G8551
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for G8551 electronic component. |
Information | Total 2 Pages | |
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