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What is G8051S?

This electronic component, produced by the manufacturer "GTM", performs the same function as "NPN EPITAXIAL TRANSISTOR".


G8051S Datasheet PDF - GTM

Part Number G8051S
Description NPN EPITAXIAL TRANSISTOR
Manufacturers GTM 
Logo GTM Logo 


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G8051S
NPN EPITAXIAL TRANSISTOR
ISSUED DATE :2003/11/11
REVISED DATE :2004/11/29B
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
Description
The G8051S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio
amplifier for portable radio and general purpose applications.
Features
*Collector current up to 700mA
*Collector –Emitter voltage up to 20V
*Complementary to G8551S
Package Dimensions
D
E
S1 TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25 ,unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
VCBO
VCEO
VEBO
IC
Tj
TsTG
PD
Ratings
25
20
5
0.7
+150
-55 ~ +150
625
Unit
V
V
V
A
mW
Electrical Characteristics(Ta = 25
Symbol
Min.
Typ.
BVCBO
25
-
BVCEO
20
-
BVEBO 5 -
ICBO
--
IEBO
-
hFE1 100 -
hFE2
- 100
VCE(sat)
-
-
VBE(on)
-
-
fT 150 -
Cob - 10
,unless otherwise specified)
Max.
Unit
Test Conditions
- V IC=10uA,IE=0
- V IC=1mA,IB=0
- V IE=10uA,IC=0
1 uA VCB=20V, IE=0
100 nA VBE=6V,Ic=0
400 VCE=1V,IC=150mA
- VCE=1V,IC=150mA
0.5 V lC=500mA,IB=50mA
1 V VCE=1V,Ic=150mA
-
MHz
VCE=10V,Ic=20mA, ,f=100MHz
- pF VCB=10V, IE=0A,f=1MHz
Classification Of hFE1
Rank
Range
C
100-180
D
160-300
E
250-400
G8051S
Page: 1/2


Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
G8051The function is NPN EPITAXIAL TRANSISTOR. GTMGTM
G8051SThe function is NPN EPITAXIAL TRANSISTOR. GTMGTM

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