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PDF MHPA18010N Data sheet ( Hoja de datos )
| Número de pieza | MHPA18010N | |
| Descripción | CDMA Band RF Linear LDMOS Amplifier | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Technical Data
CDMA Band
RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in 50 ohm systems operating in
the 1800 to 1900 MHz frequency band. A silicon FET design provides
outstanding linearity and gain. In addition, the excellent group delay and phase
linearity characteristics are ideal for digital CDMA and GSM modulation
systems.
• Typical CDMA Performance: 1840 MHz, 28 Volts
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
• Adjacent Channel Power: - 51 dBc @ 30 dBm Average Power,
885 kHz Channel Spacing
• Power Gain: 24.5 dB Min (@ f = 1840 MHz)
Features
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• N Suffix Indicates Lead - Free Terminations
Document Number: MHPA18010N
Rev. 4, 5/2006
MHPA18010N
1805- 1880 MHz
10 W, 24.5 dB
RF HIGH POWER LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 3
Table 1. Maximum Ratings (TC = 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power (Single Carrier CW)
Storage Temperature Range
Operating Case Temperature Range
Symbol
VDD
Pin
Tstg
TC
Value
30
+20
- 40 to +100
- 20 to +100
Unit
Vdc
dBm
°C
°C
Table 2. Electrical Characteristics (VDD = 28 Vdc, VBIAS ≅ 8 V Set for Supply Current of 600 mA, TC = 25°C, 50 Ω System)
Characteristic
Symbol
Min Typ Max
Unit
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Comp.
(f = 1840 MHz)
(f = 1805 - 1880 MHz)
(f = 1840 MHz)
IDD
Gp
GF
P1dB
— 600
24.5 25.5
— 0.2
— 41.5
—
—
0.5
—
mA
dB
dB
dBm
Input VSWR
Noise Figure
(f = 1805 - 1880 MHz)
(f = 1840 MHz)
VSWRin
NF
—
1.5:1
2:1
— 8 10
dB
Adjacent Channel Power Rejection @ 30 dBm Average Power,
1.23 MHz BW, 885 kHz Channel Spacing
ACPR
— - 58 - 51
dBc
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHPA18010N
1
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