GJ60N03 Datasheet PDF - GTM
Part Number | GJ60N03 | |
Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Manufacturers | GTM | |
Logo | ||
There is a preview and GJ60N03 download ( pdf file ) link at the bottom of this page. Total 5 Pages |
Preview 1 page No Preview Available ! www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2004/03/03
REVISED DATE :2005/10/19C
GJ60N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
16.5m
55A
Description
The GJ60N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
30
±20
55
35
215
62.5
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
2.0
110
Unit
/W
/W
GJ60N03
Page: 1/5
|
|
ISSUED DATE :2004/03/03
REVISED DATE :2005/10/19C
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ60N03
Page: 5/5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GJ60N03 electronic component. |
Information | Total 5 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ GJ60N03.PDF Datasheet ] |
Share Link :
Electronic Components Distributor
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
Part Number | Description | MFRS |
GJ60N03 | The function is N-CHANNEL ENHANCEMENT MODE POWER MOSFET. GTM | |
Semiconductors commonly used in industry:
1N4148 |  
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
GJ60
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA |