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Datasheet GJ4672 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GJ4672 | NPN EPITAXIAL SILICON TRANSISTOR
ISSUED DATE :2005/07/15 REVISED DATE :
GJ4672
Description Features
NPN EPITAXIAL SILICON TRANSISTOR
The GJ4672 is designed for low frequency amplifier applications. Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA Excellent DC current gain characteristics
Pac |  GTM | transistor |
GJ4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GJ40-931 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | GJ405 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/12/06 REVISED DATE :
GJ405
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 32m -18A
The GJ405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate resistance. The TO-252 packa GTM mosfet | | |
| 3 | GJ40N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/01/25 REVISED DATE :
GJ40N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 21m 36A
The GJ40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe GTM mosfet | | |
| 4 | GJ40T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/22 REVISED DATE :
GJ40T 03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 25m 28A
Description
The GJ40T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance GTM mosfet | | |
| 5 | GJ41C | NPN EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2005/05/12 REVISED DATE :
GJ41C
Description Features
NP N EP ITAXI AL PL ANAR T RANSI STOR
The GJ41C is designed for use in general purpose amplifier and switching applications. *Complementary to GJ42C
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min GTM transistor | | |
| 6 | GJ42C | PNP EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2005/05/12 REVISED DATE :
GJ42C
Description Features
P N P EP I TAXI AL PL AN AR T R AN SI ST O R
The GJ42C is designed for use in general purpose amplifier and switching applications. *Complementary to GJ41C
Package Dimensions TO-252
REF. A B C D E F S
Millime GTM transistor | | |
| 7 | GJ45N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/08/16 REVISED DATE :
GJ45N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 9m 45A
The GJ45N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec GTM mosfet | |
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