GJ45N03 Datasheet PDF - GTM
Part Number | GJ45N03 | |
Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Manufacturers | GTM | |
Logo | ||
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Pb Free Plating Product
ISSUED DATE :2006/08/16
REVISED DATE :
GJ45N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
9m
45A
Description
The GJ45N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching Speed
*RoHS Compliant
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
EAS
IAS
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
25
±20
45
32
150
50
0.4
150
25
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
Value
2.5
110
Unit
/W
/W
GJ45N03
Page: 1/4
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GJ45N03 electronic component. |
Information | Total 4 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ GJ45N03.PDF Datasheet ] |
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