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What is GJ32C?

This electronic component, produced by the manufacturer "GTM", performs the same function as "PNP EPITAXIAL PLANAR TRANSISTOR".


GJ32C Datasheet PDF - GTM

Part Number GJ32C
Description PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturers GTM 
Logo GTM Logo 


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GJ32C
ISSUED DATE :2005/05/12
REVISED DATE :
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GJ32C is designed for use in general purpose amplifier and switching applications.
Features
*Complementary to GJ31C
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Absolute Maximum Ratings (Ta = 25 , unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
-100
Collector to Emitter Voltage
VCEO
-100
Emitter to Base Voltage
VCEO
-5
Collector Current (DC)
IC -3
Collector Current (Pulse)
IC -5
Junction Temperature
Tj +150
Storage Temperature
TsTG
-55 ~ +150
Total Power Dissipation
PD
PD(TC=25 )
2
15
Unit
V
V
V
A
A
W
W
Electrical Characteristics (Rating at Ta=25 )
Symbol
Min.
Typ.
Max.
BVCBO
-100
-
-
BVCEO
-100
-
-
BVEBO
-5 -
-
ICES
- - -20
ICEO
- - -50
IEBO
- - -1
*VCE(sat)
- - -1.2
*VBE(on)
- - -1.8
*hFE1
25 -
-
*hFE2
10 - 50
fT 3 - -
Unit
V
V
V
uA
uA
mA
V
V
MHz
Test Conditions
IC=-1mA, IE=0
IC=-30mA, IB=0
IE=-100uA, IC=0
VCE=-100V, VEB=0V
VCE=-60V, IB=0
VEB=-5V, IC=0
IC =-3A, IB=-375mA
VCE=-4V, IC=-3A
VCE=-4V, IC=-1A
VCE=-4V, IC=-3A
VCE=-10V, IC=-500mA, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GJ32C
Page: 1/2


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GJ32C electronic component.


Information Total 2 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
GJ32CThe function is PNP EPITAXIAL PLANAR TRANSISTOR. GTMGTM

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