GJ122 Datasheet PDF - GTM
Part Number | GJ122 | |
Description | NPN EPITAXIAL PLANAR TRANSISTOR | |
Manufacturers | GTM | |
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ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
GJ122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GJ122 is designed for use in general purposes and low speed switching applications.
Features
High DC current gain
Built-in a damper diode at E-C
Package Dimensions
TO-252
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
BVCBO
Collector to Emitter Voltage
BVCEO
Emitter to Base Voltage
BVEBO
Collector Current
IC
Total Power Dissipation(Tc=25 )
PD
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
+150
-55 ~ +150
100
100
5
5
20
Unit
V
V
V
A
W
Electrical Characteristics (Rating at 25 ambient temperature unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
BVCEO
100 - - V IC=1mA, IE=0
100 - - V IC=30mA, IB=0
BVEBO
ICBO
ICEO
5 - - V IE=1mA, IC=0
- - 10 A VCB=100V, IE=0
- - 10 A VCE=50V, IB=0
IEBO
*VCE(sat)1
*VCE(sat)2
- - 2 mA VEB=5V, IC=0
- - 2 V IC=3A, IB=16mA
- - 4 V IC=5A, IB=20mA
*VBE(sat)
*VBE(on)
*hFE1
- - 4 V IC=5A, IB=50mA
- - 2.5 V VCE=3V, IC=3A
1 - - K VCE=3V, IC=500mA
*hFE2
Cob
1 - - K VCE=3V, IC=3A
- - 200 pF VCB=10V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GJ122
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GJ122 electronic component. |
Information | Total 3 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ GJ122.PDF Datasheet ] |
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