GI494 Datasheet PDF - GTM
Part Number | GI494 | |
Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Manufacturers | GTM | |
Logo | ||
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Pb Free Plating Product
ISSUED DATE :2006/12/07
REVISED DATE :
GI494
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
11m
55A
Description
The GI494 uses advanced trench technology to provide excellent on-resistance and low gate charge.
The through-hole version (TO-251) is available for low-profile applications and suited for use as a high side
switch in SMPS and general purpose applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
30
±12
55
39
120
63
0.42
-55 ~ +175
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
2.4
50
Unit
/W
/W
GI494
Page: 1/4
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GI494 electronic component. |
Information | Total 4 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ GI494.PDF Datasheet ] |
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