BF1212R Datasheet PDF - NXP Semiconductors
Part Number | BF1212R | |
Description | N-channel dual-gate MOS-FETs | |
Manufacturers | NXP Semiconductors | |
Logo | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1212; BF1212R; BF1212WR
N-channel dual-gate MOS-FETs
Product specification
2003 Nov 14
|
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www.DataSheet4U.com
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1212; BF1212R; BF1212WR
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 12 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-ss
Cig2-ss
Coss
Crss
F
Gtr
Xmod
forward transfer admittance pulsed; Tj = 25 °C
28 33 43
input capacitance at gate 1 f = 1 MHz
− 1.7 2.2
input capacitance at gate 2 f = 1 MHz
− 1.1 −
output capacitance
f = 1 MHz
− 0.9 −
reverse transfer capacitance f = 1 MHz
− 15 30
noise figure
f = 11 MHz; GS = 20 mS; BS = 0
−4−
f = 400 MHz; YS = YS (opt)
− 0.9 1.6
f = 800 MHz; YS = YS (opt)
− 1.1 1.8
power gain
f = 200 MHz; GS = 2 mS; BS = BS (opt);
GL = 0.5 mS; BL = BL (opt)
−
35 −
f = 400 MHz; GS = 2 mS; BS = BS (opt);
GL = 1 mS; BL = BL (opt)
−
30 −
f = 800 MHz; GS = 3.3 mS; BS = BS (opt); −
GL = 1 mS; BL = BL (opt)
25 −
cross-modulation
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 1
at 0 dB AGC
90 −
−
at 10 dB AGC
− 89 −
at 40 dB AGC
100 104 −
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBµV
dBµV
dBµV
Note
1. Measured in test circuit Fig.21.
2003 Nov 14
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BF1212R electronic component. |
Information | Total 15 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ BF1212R.PDF Datasheet ] |
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