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PDF UPA814T Data sheet ( Hoja de datos )
| Número de pieza | UPA814T | |
| Descripción | NPN SILICON HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | CEL | |
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NPN SILICON HIGH UPA814T
FREQUENCY TRANSISTOR
FEATURES
• SMALL PACKAGE STYLE:
2 NE688 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE:
NF = 1.5 dB TYP at 2 GHz
• HIGH GAIN BANDWIDTH: fT = 9 GHz
• HIGH COLLECTOR CURRENT: 100 mA
DESCRIPTION
NEC's UPA814T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
fT, low voltage bias and small size make this device suited for
various hand-held wireless applications.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06
2.1 ± 0.1
1.25 ± 0.1
0.65
2.0 ± 0.2
1.3
1
2
3
6
0.2 (All Leads)
5
4
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
9
VCEO Collector to Emitter Voltage V
6
VEBO Emitter to Base Voltage
V
2
IC Collector Current
mA 100
PT Total Power Dissipation
1 Die
2 Die
mW
mW
110
200
TJ Junction Temperature °C 150
TSTG Storage Temperature
°C -65 to +150
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
0.9 ± 0.1
0.7
0 ~ 0.1
+0.10
0.15 - 0.05
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
PART NUMBER
PACKAGE OUTLINE
UPA814T
S06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP MAX
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
µA
IEBO
hFE1
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain at VCE = 1 V, IC = 3 mA
µA
80
110
fT Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz
GHz
9.0
Cre2
Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz
pF
0.75
|S21E|2 Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz
dB
6.5
NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz
dB
1.5
hFE1/hFE2 hFE Ratio: hFE1 = Smaller Value of Q1, or Q2
hFE2 = Larger Value of Q1 or Q2
0.85
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA814T-T1, 3K per reel.
0.1
0.1
160
0.85
California Eastern Laboratories
1 page | ||
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