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What is D2024UK?

This electronic component, produced by the manufacturer "Seme LAB", performs the same function as "METAL GATE RF SILICON FET".


D2024UK Datasheet PDF - Seme LAB

Part Number D2024UK
Description METAL GATE RF SILICON FET
Manufacturers Seme LAB 
Logo Seme LAB Logo 


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No Preview Available ! D2024UK datasheet, circuit

TetraFET
D2024UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
A
8
D7
6
5
1
2
CB
3
4
N
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
SINGLE ENDED
H
K
L
J
PIN 1 SOURCE
www.DataSheet4U.com
PIN 2 DRAIN
PIN 3 DRAIN
PIN 4 SOURCE
M
E
FG
SO8 PACKAGE
PIN 5 SOURCE
PIN 6 GATE
PIN 7 GATE
PIN 8 SOURCE
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
0.76
0.51
1.02
45°
0°
7°
0.20
2.18
4.57
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
29W
BVDSS
Drain – Source Breakdown Voltage
65V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
4A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected] Website http://www.semelab.co.uk
Prelim.6/00


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for D2024UK electronic component.


Information Total 2 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
D2024UKThe function is METAL GATE RF SILICON FET. Seme LABSeme LAB

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