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PDF 2SJ664 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ664 | |
| Descripción | General-Purpose Switching Device | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : EN8589
2SJ664
2SJ664
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
• Motor drive, DC / DC converter.
• Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
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Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=30V, L=200µH, IAV=--17A
*2 L≤200µH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Ratings
--100
±20
--17
--68
1.65
50
150
--55 to +150
38
--17
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : J664
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0V
VDS=--100V, VGS=0V
VGS= ±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--8A
ID=--8A, VGS=--10V
ID=--8A, VGS=--4V
min
--100
--1.2
9
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
15 S
102 136 mΩ
138 193 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1805QA TS IM TB-00001097 No.8589-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SJ664.PDF ] | |
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