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Datasheet BF167 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BF167 | (BF1xx) TV / Video Devices | Semiconductors | tv |
BF1 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BF1005 | N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) BF 1005
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF 1005
Marking Ordering Code Pin Configuration Siemens Semiconductor Group mosfet | | |
2 | BF1005 | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF1005...
AGC
RF Input
Drain RF Output G2 + DC G1
GND
ESD (Electrostat Infineon Technologies AG mosfet | | |
3 | BF1005R | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF1005...
AGC
RF Input
Drain RF Output G2 + DC G1
GND
ESD (Electrostat Infineon Technologies AG mosfet | | |
4 | BF1005S | N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) BF 1005S
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Q62702-F1665
Pin Config Siemens Semiconductor Group mosfet | | |
5 | BF1005S | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF1005S...
AGC
RF Input
Drain RF Output G2 + DC G1
GND
ESD (Electrost Infineon Technologies AG mosfet | | |
6 | BF1005SR | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF1005S...
AGC
RF Input
Drain RF Output G2 + DC G1
GND
ESD (Electrost Infineon Technologies AG mosfet | | |
7 | BF1005SW | Silicon N-Channel MOSFET Tetrode BF1005S...
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network
Drain AGC HF Input G2 G1 HF Output + DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
T Infineon Technologies AG mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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