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PDF APTC60DAM18CTG Data sheet ( Hoja de datos )
| Número de pieza | APTC60DAM18CTG | |
| Descripción | Boost chopper SiC FWD diode Super Junction MOSFET Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APTC60DAM18CTG (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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APTC60DAM18CTG
Boost chopper
SiC FWD diode
Super Junction
MOSFET Power Module
VBUS SENSE
VBUS
NTC2
CR1
VDSS = 600V
RDSon = 18mΩ max @ Tj = 25°C
ID = 143A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
•
Q2
G2
S2
0/VBU S
OUT
NTC1
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
• FWD SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
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• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
VB US
VB US
SE NSE
G2
S2
0/VBUS
S2
G2
OUT
OUT
NTC2
NTC1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
600
143
107
572
±30
18
833
20
1
1800
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–7
1 page  
Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
100
Crss
10
0
10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTC60DAM18CTG
ON resistance vs Temperature
3.0
2.5
VGS=10V
ID= 143A
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
limited by RDSon
100
100µs
10
1
1
DC line
1 ms
Single pulse
TJ=150°C
10 ms
10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=143A
TJ=25°C
10
VDS=120V
VDS=300V
8 VDS=480V
6
4
2
0
0 200 400 600 800 1000 1200
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet APTC60DAM18CTG.PDF ] | |
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