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Datasheet GB15RF120K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GB15RF120K | IGBT PIM MODULE PD - 94571
GB15RF120K
IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient � |  International Rectifier | igbt |
GB1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GB100DA60UP | Insulated Gate Bipolar Transistor www.DataSheet.co.kr
GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
FEATURES
• NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED® antiparallel diodes with ultrasoft reverse recovery
SOT-227
• Ful  Vishay Siliconix transistor | | |
| 2 | GB100TS60NPBF | Ultrafast Speed IGBT www.DataSheet.co.kr
GB100TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A
FEATURES
• Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Vishay Siliconix igbt | | |
| 3 | GB10B60KD | IRGB10B60KD
PD - 94382D
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB10B60KD IRGS10B60KD IRGSL10B60KD
VCES = 600V IC = 12A, TC=100°C
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Squar International Rectifier data | | |
| 4 | GB10NB37LZ | STGB10NB37LZ ®
STGB10NB37LZ
N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE STGB10NB37LZ
s s s s s s
V CES CLAMPED
V CE(s at) < 1.8 V
IC 10 A
POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTI  ST Microelectronics data | | |
| 5 | GB10NC60KD | STGB10NC60KD STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD
10 A, 600 V short-circuit rugged IGBT
Features
■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction
susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs
Desc  STMicroelectronics data | | |
| 6 | GB10RF120K | IGBT PIM MODULE Bulletin I27278 01/07
GB10RF120K
IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics • Positive VCE (on) Temperature Coeffici International Rectifier igbt | | |
| 7 | GB14C40L | IRGB14C40L PD - 93891A
Ignition IGBT
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
The advanced IGBT process family i International Rectifier data | |
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