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PDF IRL630 Data sheet ( Hoja de datos )
| Número de pieza | IRL630 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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HEXFET® Power MOSFET
PD -9.1255
IRL630
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
150°C Operating Temperature
Fast Switching
Ease of paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
VDSS = 200V
RDS(on) = 0.40Ω
ID = 9.0A
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, V GS @ 5.0V
Continuous Drain Current, V GS @ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
9.0
5.7
36
74
0.59
±10
250
9.0
7.4
5.0
-55 to + 150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
1.7
––––
62
Units
°C/W
To Order
Revision 0
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10
8
6
4
2
0A
25 50 75 100 125 150
TC, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
5.0 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRL630
RD
D.U.T.
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
PD M
Notes:
1. Duty factor D = t1 / t2
t1
t2
2 . P e a k TJ = PD M x Z th J C + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10AA
To Order
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRL630.PDF ] | |
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