|
|
Número de pieza | IRL620S | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRL620S (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! Previous Datasheet
Index
Next Data Sheet
HEXFET® Power MOSFET
PD -9.1218
IRL620S
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDS(on) Specified at VGS=4V & 5V
Fast Switching
VDSS = 200V
RDS(on) = 0.80Ω
ID = 5.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The SMD-220 is a surface-mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface-mount application.
SMD-220
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 5.0 V
Continuous Drain Current, VGS @ 5.0 V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
Max.
5.2
3.3
21
50
3.1
0.40
0.025
±10
125
5.2
5.0
5.0
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
—
—
—
Typ.
—
—
—
Max.
2.5
40
62
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques, refer
to Application Note AN-994.
To Order
Revision 0
1 page Previous Datasheet
Index
Next Data Sheet
IRL620S
Fig 10a. Switching Time Test Circuit
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
To Order
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRL620S.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRL620 | Power MOSFET ( Transistor ) | Fairchild Semiconductor |
IRL620 | Power MOSFET ( Transistor ) | Vishay |
IRL620 | Power MOSFET ( Transistor ) | International Rectifier |
IRL620A | Advanced Power MOSFET | Fairchild Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |