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PDF IRG4PC50KPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG4PC50KPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 95647
INSULATED GATE BIPOLAR TRANSISTOR
Features
High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
Combines low conduction losses with high
switching speed
Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
Lead-Free
IRG4PC50KPbF
Short Circuit Rated
UltraFast IGBT
C
VCES = 600V
G
E
n-channel
VCE(on) typ. = 1.84V
@VGE = 15V, IC = 30A
Benefits
As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
Latest generation 4 IGBTs offer highest power
density motor controls possible
This part replaces the IRGPC50K and IRGPC50M
devices
Absolute Maximum Ratings
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Max.
600
52
30
104
104
10
±20
170
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Units
V
A
µs
V
mJ
W
°C
Typ.
0.24
6 (0.21)
Max.
0.64
40
Units
°C/W
g (oz)
1
7/26/04
1 page  
IRG4PC50KPbF
5000
4000
3000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
2000
1000
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
4.0
VCC = 480V
VGE = 15V
TJ = 25 ° C
IC = 30A
3.0
2.0
1.0
20
VCC = 400V
I C = 30A
16
12
8
4
0
0 40 80 120 160 200
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100 RG = 5O.0hΩm
VGE = 15V
VCC = 480V
10
1
IC = 60 A
IC = 30 A
IC = 15 A
0.0
0
10 20 30 40
RG , Gate Resistance ((OΩΩh)m)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4PC50KPBF.PDF ] | |
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