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What is DMN5L06T?

This electronic component, produced by the manufacturer "Diodes Incorporated", performs the same function as "N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR".


DMN5L06T Datasheet PDF - Diodes Incorporated

Part Number DMN5L06T
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Manufacturers Diodes Incorporated 
Logo Diodes Incorporated Logo 


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Features
· N-Channel MOSFET
· Low On-Resistance
· Very Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· Ultra-Small Surface Mount Package
· Lead Free By Design/RoHS Compliant (Note 2)
· “Green” Device (Note 3)
Mechanical Data
· Case: SOT-523
· Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals Connections: See Diagram
· Terminals: Finish ¾ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
· Marking: Date Code and Type Code, See Page 2
· Ordering & Date Code Information: See Page 2
· Weight: 0.006 grams (approximate)
DMN5L06T
Lead-free Green
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
TOP VIEW
D
BC
GS
A
G
H
K
N
J
DL
Drain
Gate
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
M D ¾ ¾ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
All Dimensions in mm
Source
EQUIVALENT CIRCUIT
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
Drain Current (Note 1)
Continuous
Drain Current (Note 1)
Pulsed
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGSS
ID
IDM
Pd
RqJA
Tj, TSTG
Value
50
50
±20
±40
280
1.5
150
833
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
V
mA
A
mW
°C/W
°C
DS30721 Rev. 2 - 2
1 of 5
www.diodes.com
DMN5L06T
ã Diodes Incorporated

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DMN5L06T equivalent
Marking Information
Date Code Key
Month
Code
K5L YM
K5L = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
Year
Code
2005
S
2006
T
2007
U
2008
V
2009
W
Jan
Feb March Apr
May Jun
Jul Aug Sep
Oct
Nov Dec
1 2 3 4 5 678 9 O ND
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30721 Rev. 2 - 2
5 of 5
www.diodes.com
DMN5L06T


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Featured Datasheets

Part NumberDescriptionMFRS
DMN5L06The function is SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR. Diodes IncorporatedDiodes Incorporated
DMN5L06DMKThe function is DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR. Diodes IncorporatedDiodes Incorporated
DMN5L06DMKQThe function is DUAL N-CHANNEL ENHANCEMENT MODE MOSFET. DiodesDiodes

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