FVP18030IM3LSG1 Datasheet PDF - Fairchild Semiconductor
Part Number | FVP18030IM3LSG1 | |
Description | Sustain | |
Manufacturers | Fairchild Semiconductor | |
Logo | ||
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Sustain
March 2007
PDP SPMTM
Features
• Use of high speed 300V IGBTs with parallel FRDs
• Single-grounded power supply by means of built-in HVIC
• Sufficient current driving capability for IGBTs due to adding a
buffer
• Isolation rating of 1500Vrms/min.
• Low leakge current due to using an insulated metal sub-
strates
Applications
• Sustain Part of a PDP(Plasma display panel)
General Description
It is an advanced samart power module(SPMTM) that Fairchild
has newly developed and designed to provide very compact
and optimized performance for the sustaining circuit of PDP
driving system. It contains HVICs, buffers and low-loss high
speed IGBTs that are needed to compose the sustaining cir-
cuits. Under voltage lock-out protection function enhances the
system reliabilty. The high speed built-in HVIC provides opto-
coupler-less single power supply IGBT gate driving capability
that further reduce the overall system size of PDP and the buffer
provides high current driving capability of IGBTs.
Package Outlines
Figure 1.
©2006 Fairchild Semiconductor Corporation
FVP18030IM3LSG1 Rev. A
1
www.fairchildsemi.com
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Absolute Maximum Ratings (TC = 25°C, Unless Otherwise Specified)
Symbol
Parameter
Conditions
VCC
Control Supply Voltage
Applied between VCCL-COML, VCCH - COMH
VBS
Control Bias Voltage
Applied between VBL - VSL, VBH - VSH
VIN Input Signal Voltage
Applied between VINL-COML,VINH - COMH
Rating
20
20
-0.3~17
Units
V
V
V
Symbol
Parameter
VCE
Collector to Emitter Voltage
VRRM Peak Repetitive Reverse Voltage
VIN Input Signal Voltage
IC
IF(AV)
ICP
IFP
Collector Current Continuous
Average Rectified Forward Current
Pulsed Collector Current
Pulsed Diode Current
Notes :
1 Pulse Width = 100µsec, Duty = 0.1; half sine wave
*Icp limited by MAX Tj
Conditions
Between CL to EL, Between CH to EH
VGH-EH=VGL-EL=0V , ICH=ICL=250µA
Between CH to AH, Between CL to AL
IAH=IAL=250µA
VINL, VINH
Between CL to EL, Between CH to EH
Between CH to AH, Between CL to AL
Between CL to EL, Between CH to EH (Note1)
Between CH to AH, Between CL to AL (Note1)
Rating
300
300
-0.3 to
Vcc+0.3
180
10
450
100
Units
V
V
V
A
A
A
A
Symbol
Parameter
IGBT Dissipation
Pd
FRD Dissipation
Tj
TC
TSTG
VISO
Operating Junction Temperture
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
Tc=25°C per IGBT
Tc=100°C per IGBT
Tc=25°C per diode
Tc=100°C per diode
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to IMS substrate
Rating
167
67
34
14
-20 ~ 150
-20 ~ 125
-40 ~ 125
1500
Units
W
W
W
W
°C
°C
°C
Vrms
Thermal Resistance
Symbol
Rth(j-c)
Parameter
Junction to Case Thermal
Resistance
Conditions
Between CH to EH, Between CL to EL per IGBT
Between CH to AH, Between CL to AL per Diode
Min.
-
-
Max.
0.75
3.70
Units
°C/W
°C/W
FVP18030IM3LSG1 Rev. A
5
www.fairchildsemi.com
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