|
|
PDF FCB11N60 Data sheet ( Hoja de datos )
| Número de pieza | FCB11N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FCB11N60 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
FCB11N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.32Ω
• Ultra low gate charge (typ. Qg = 40nC)
• Low effective output capacitance (typ. Coss.eff = 95pF)
• 100% avalanche tested
SuperFETTM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
D
GS
Absolute Maximum Ratings
www.DataSheet4U.com
D
!
"
!"
G!
"
"
!
S
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FCB11N60
600
11
7
33
± 30
340
11
12.5
4.5
125
1.0
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA*
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
FCB11N60
1.0
40
62.5
©2005 Fairchild Semiconductor Corporation
FCB11N60 Rev. A
1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
FCB11N60 Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FCB11N60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FCB11N60 | N-Channel MOSFET | Fairchild Semiconductor |
| FCB11N60F | N-Channel MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |