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AD8312 Datasheet PDF - Analog Devices

Part Number AD8312
Description RF Detector
Manufacturers Analog Devices 
Logo Analog Devices Logo 



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AD8312 datasheet, circuit
Data Sheet
50 MHz to 3.5 GHz, 45 dB RF Detector
AD8312
FEATURES
GENERAL DESCRIPTION
Complete RF detector function
Typical range: −45 dBm to 0 dBm, referencing 50 Ω
Frequency response from 50 MHz to 3.5 GHz
Temperature stable linear in dB response
Accurate to 3.5 GHz
Rapid response: 85/120 ns (rise/fall)
Low power: 12 mW at 2.7 V
APPLICATIONS
Cellular handsets (GSM, CDMA, WCDMA)
RSSI and TSSI for wireless terminal devices
Transmitter power measurement
The AD8312 is a complete, low cost subsystem for the
measurement of radio frequency (RF) signals in the frequency
range of 50 MHz to 3.5 GHz. It has a typical dynamic range of
45 dB and is intended for use in a wide variety of cellular handsets
and other wireless devices. It provides a wider dynamic range
and better accuracy than possible using discrete diode detectors. In
particular, its temperature stability is excellent over the full
operating range of −40°C to +85°C. Its high sensitivity allows
measurement at low power levels, thus reducing the amount of
power that needs to be coupled to the detector. It is essentially a
voltage responding device, with a typical signal range of 1.25 mV
to 224 mV rms or −45 dBm to 0 dBm, referencing 50 Ω.
For convenience, the signal is internally ac-coupled, using a
5 pF capacitor to a load of 3 kΩ in shunt with 1.3 pF. This high-
pass coupling, with a corner at approximately 16 MHz, determines
the lowest operating frequency. Therefore, the source may be dc
grounded.
The AD8312 output, VOUT, increases from close to ground to
about 1.2 V because the input signal level increases from 1.25 mV
to 224 mV. A capacitor may be connected between the VOUT
and CFLT pins when it is desirable to increase the time interval
over which averaging of the input waveform occurs.
The AD8312 is available in a 6-ball, 1.0 mm × 1.5 mm, wafer
level chip scale package and consumes 4.2 mA from a 2.7 V to
5.5 V supply.
FUNCTIONAL BLOCK DIAGRAM
RFIN
CFLT
V-I
+
I-V
DET
DET
DET
DET
DET
10dB
10dB
10dB
10dB
BAND-GAP
REFERENCE
VSET
VOUT
VPOS
COMM
OFFSET
COMPENSATION
AD8312
Figure 1.
Rev. B
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2005–2015 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com

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AD8312 equivalent
AD8312
Data Sheet
Parameter
f = 1.9 GHz
Input Impedance
±1 dB Dynamic Range
Maximum Input Level
Minimum Input Level
Slope
Intercept
Output Voltage − High Power In
Output Voltage − Low Power In
Temperature Sensitivity
f = 2.2 GHz
Input Impedance
±1 dB Dynamic Range
Maximum Input Level
Minimum Input Level
Slope
Intercept
Output Voltage—High Power In
Output Voltage—Low Power In
Temperature Sensitivity
f = 2.5 GHz
Input Impedance
±1 dB Dynamic Range
Maximum Input Level
Minimum Input Level
Slope
Intercept
Output Voltage—High Power In
Output Voltage—Low Power In
Temperature Sensitivity
OUTPUT INTERFACE
Minimum Output Voltage
Maximum Output Voltage1
General Limit
Available Output Current
Residual RF (at 2f )
Output Noise
Fall Time
Rise Time
VSET INTERFACE
Input Resistance
Bias Current Source
Test Conditions/Comments
TA = 25°C
−40°C < TA < +85°C
±1 dB error
±1 dB error
PIN = −10 dBm
PIN = −40 dBm
PIN = −10 dBm
25°C ≤ TA ≤ 85°C
−40°C ≤ TA ≤ +25°C
TA = 25°C
−40°C < TA < +85°C
±1 dB error
±1 dB error
PIN = −10 dBm
PIN = −40 dBm
PIN = −10 dBm
25°C ≤ TA ≤ 85°C
−40°C ≤ TA ≤ +25°C
TA = 25°C
−40°C < TA < +85°C
±1 dB error
±1 dB error
PIN = −10 dBm
PIN = −40 dBm
PIN = −10 dBm
25°C ≤ TA ≤ 85°C
−40°C ≤ TA ≤ +25°C
VOUT (Pin 2)
No signal at RFIN, RL ≥ 10 kΩ
RL ≥ 10 kΩ
2.7 V ≤ VS ≤ 5.5 V
Sourcing/sinking
f = 0.1 GHz (worst condition)
RF input = 2.2 GHz, −10 dBm, fNOISE = 100 kHz, CFLT open
Input level = off to 0 dBm, 90% to 10%
Input level = 0 dBm to off, 10% to 90%
VSET (Pin 3)
RFIN = −10 dBm; VSET = 1.2 V
Min Typ
Max Unit
450 || 1.13
48
40
1
−47
19.47
−52.4
0.826
0.240
Ω || pF
dB
dB
dBm
dBm
mV/dB
dBm
V
V
0.004
0.005
dB/°C
dB/°C
430 || 1.09
48
40
1
−47
19.1
−52.1
0.803
0.230
Ω || pF
dB
dB
dBm
dBm
mV/dB
dBm
V
V
−0.0023
0.0055
dB/°C
dB/°C
400 || 1.03
49
40
1
−48
18.6
−51.2
0.762
0.204
Ω || pF
dB
dB
dBm
dBm
mV/dB
dBm
V
V
0.005
−0.0126
dB/°C
dB/°C
1.8
VS − 1.2
0.02
2.0
VS − 1
2/0.1
100
1.4
120
85
0.2 V
V
V
mA
µV
µV/√Hz
ns
ns
13 kΩ
75 µA
Rev. B | Page 4 of 20

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Information Total 21 Pages
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