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PDF 4128 Data sheet ( Hoja de datos )
| Número de pieza | 4128 | |
| Descripción | HIGH FREQUENCY SWITCHING TRANSISTORS | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 4128 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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UTC 4128
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY SWITCHING
TRANSISTORS FOR BALLASTERS
DESCRIPTION
UTC 4128 is designed for specially used for electronic
ballasters in 110VAC environment.
FEATURES
* Triple diffused technology.
* High switching speed
1
TO-126
ABSOLUTE MAXIMUM RATINGS
(Tc = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Peak Collector Consume Dissipation
Peak Junction Temperature
Storage Temperature
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: 4128L
SYMBOL
VCBO
VCEO
Vwww.DEaBtaOSheet4U.com
IC
PC
TJ
TSTG
RATINGS
400
200
7
5
40
150
-40 ~ +150
UNIT
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta = 25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Emitter Maintenance Voltage VCEO (SUS) IC=10mA, IB=0
Collector-Base Breakdown Voltage
V (BR) CBO IC=1mA, IB=0
200
400
Emitter-Base Breakdown Voltage
V (BR) EBO IE=1mA, IC=0
7
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
ICBO
ICEO
VCB=400V, IE=0
VCE=200V, IB=0
Emitter-Base Cutoff Current
IEBO VEB=7V, Ic=0
DC Current Gain
hFE (1)
hFE (2)
VCE=10V, Ic=0.5A
VCE=5V, Ic=2A
10
10
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE (sat)
VBE (sat)
IC=1A, IB=0.2A
IC=4A, IB=1A
IC=2A, IB=0.5A
Fall Time
tf IC=2A, IB1= -IB2 = 0.4A
Storage Time
Feature Frequency
ts IC=2A, IB1= -IB2 = 0.4A
fT VCE=10V, Ic=0.5A
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com
TYP MAX
100
100
100
60
40
0.8
2
1.6
0.9
4
UNIT
V
V
V
µA
µA
µA
V
V
V
µs
µs
MHz
1
QW-R204-020,A
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 4128.PDF ] | |
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