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7N60 Datasheet PDF - Unisonic Technologies

Part Number 7N60
Description N-CHANNEL MOSFET
Manufacturers Unisonic Technologies 
Logo Unisonic Technologies Logo 

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UNISONIC TECHNOLOGIES CO., LTD
7N60
7.4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in switching power supplies and
adaptors.
FEATURES
* RDS(ON) < 1.0@ VGS = 10V
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
7N60L-TA3-T
7N60G-TA3-T
TO-220
7N60L-TF3-T
7N60G-TF3-T
TO-220F
7N60L-TF1-T
7N60G-TF1-T
TO-220F1
7N60L-TF2-T
7N60G-TF2-T
TO-220F2
7N60L-TF3T-T
7N60G-TF3T-T
TO-220F3
7N60L-T2Q-T
7N60G-T2Q-T
TO-262
7N60L-TQ2-T
7N60G-TQ2-T
TO-263
7N60L-TQ2-R
7N60G-TQ2-R
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 9
QW-R502-076.P

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7N60 equivalent
UNISONIC TECHNOLOGIES CO., LTD
7N60
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 9
QW-R502-076. P


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1. 600V, 7A, N-Ch, MOSFET (Transistor)

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