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PDF 2SD1624 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1624 | |
| Descripción | HIGH CURRENT SWITCHIG APPLICATION | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UTC2SD1624 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHIG
APPLICATION
DESCRIPTION
The UTC 2SD1624 applies to voltage regulators, relay
drivers, lamp drivers, and electrical equipment.
FEATURES
*Adoption of FBET, MBIT processes
*Low collector-to-emitter saturation voltage
*Fast switching speed.
*Large current capacity and wide ASO.
MARKING
XX
DG
1
SOT-89
1:EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Taw=w2w5.D°aCtaS,huenetl4eUs.csomotherwise specified )
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
6
Collector Power Dissipation( Tc=25°C)
Pc
500
Collector Current(DC)
Ic 3
Collector Current(PULSE)
Icp 6
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mW
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cutoff Current
ICBO
VCB=40V,IE=0
Emitter Cutoff Current
IEBO
VEB=4V,IC=0
DC Current Gain (note)
hFE
VCE=2V, Ic=100mA
100
Gain-Bandwidth Product
fT VCE=10V, IC=50mA
Output Capacitance
Cob VCE=10V,f=1MHz
C-E Saturation Voltage
VCE(sat)
IC=2A,IB=100mA
B-E Saturation Voltage
VBE(sat)
IC=2A,IB=100mA
C-B Breakdown Voltage
V(BR)CBO
IC=10µA,IE=0
60
C-E Breakdown Voltage
V(BR)CEO
IC=1mA,RBE=∞
50
E-B Breakdown Voltage
V(BR)EBO
IE=10µA,IC=0
6
Turn-on Time
ton See test circuit
TYP
150
25
0.19
0.94
70
MAX
1
1
560
0.5
1.2
UTC UNISONIC TECHNOLOGIES CO. LTD
UNIT
µA
µA
MHz
pF
V
V
V
V
V
ns
1
QW-R208-005,A
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SD1624.PDF ] | |
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