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PDF HN1B01FDW1T1 Data sheet ( Hoja de datos )
| Número de pieza | HN1B01FDW1T1 | |
| Descripción | Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount | |
| Fabricantes | ON Semiconductor | |
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HN1B01FDW1T1
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
Features
• High Voltage and High Current: VCEO = 50 V, IC = 200 mA
• High hFE: hFE = 200X400
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: 3A
− Machine Model: C
• Pb−Free Package is Available
http://onsemi.com
(6) (5) (4)
Q1 Q2
(1) (2)
(3)
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V(BR)CBO
60
Vdc
Collector−Emitter Voltage
V(BR)CEO
50
Vdc
Emitter−Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current − Continuous
IC
200 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
Max
380
150
−55 to +150
Unit
mW
°C
°C
654
123
SC−74
CASE 318F
STYLE 3
MARKING DIAGRAM
R9 M
R9 = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package Shipping†
HN1B01FDW1T1 SC−74 3000/Tape & Reel
HN1B01FDW1T1G SC−74 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 2
Publication Order Number:
HN1B01FDW1T1/D
1 page  
HN1B01FDW1T1
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE K
A
L
65 4
S
12 3
B
D
G
0.05 (0.002)
H
C
M
J
K
SOLDERING FOOTPRINT*
2.4
0.094
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03 OBSOLETE. NEW
STANDARD 318F−04.
INCHES
DIM MIN MAX
A 0.1142 0.1220
B 0.0512 0.0669
C 0.0354 0.0433
D 0.0098 0.0197
G 0.0335 0.0413
H 0.0005 0.0040
J 0.0040 0.0102
K 0.0079 0.0236
L 0.0493 0.0649
M 0_ 10_
S 0.0985 0.1181
MILLIMETERS
MIN MAX
2.90 3.10
1.30 1.70
0.90 1.10
0.25 0.50
0.85 1.05
0.013 0.100
0.10 0.26
0.20 0.60
1.25 1.65
0_ 10_
2.50 3.00
STYLE 3:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
1.9
0.074
0.7
0.028
0.95
0.037
0.95
0.037
1.0
0.039
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HN1B01FDW1T1.PDF ] | |
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