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PDF BS170 Data sheet ( Hoja de datos )
| Número de pieza | BS170 | |
| Descripción | Small Signal MOSFET | |
| Fabricantes | ON Semiconductor | |
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BS170
Preferred Device
Small Signal MOSFET
500 mA, 60 Volts
N−Channel TO−92 (TO−226)
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain −Source Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
Drain Current (Note)
Total Device Dissipation @ TA = 25°C
Operating and Storage Junction
Temperature Range
VDS 60 Vdc
VGS
VGSM
ID
PD
TJ, Tstg
± 20
± 40
0.5
350
−55 to
+150
Vdc
Vpk
Adc
mW
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
NOTE: The Power Dissipation of the package may result in a lower continuous
drain current.
http://onsemi.com
500 mA, 60 Volts
RDS(on) = 5.0 W
N−Channel
D
G
S
123
TO−92 (TO−226)
CASE 29
STYLE 30
MARKING DIAGRAM
& PIN ASSIGNMENT
BS170
AYWWG
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 5
1
123
Drain Gate Source
BS170 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
BS170/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BS170.PDF ] | |
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