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PDF 2N7000 Data sheet ( Hoja de datos )

Número de pieza 2N7000
Descripción N-Channel TO-92 200 mAMPS 60 VOLTS
Fabricantes ON Semiconductor 
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2n7000-mosfet


1. 60-V (D-S) MOSFET - Vishay






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2N7000
Preferred Device
Small Signal MOSFET
200 mAmps, 60 Volts
N−Channel TO−92
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain−Gate Voltage (RGS = 1.0 MW)
Gate−Source Voltage
− Continuous
− Non−repetitive (tp 50 ms)
Drain Current
− Continuous
− Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
Value
60
60
± 20
± 40
200
500
350
2.8
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
mW
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
357 °C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16from case
for 10 seconds
TL 300 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 6
1
http://onsemi.com
200 mAMPS
60 VOLTS
RDS(on) = 5 W
N−Channel
D
G
S
TO−92
CASE 29
STYLE 22
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
AND PIN ASSIGNMENT
2N
7000
AYWW G
G
1
Source
2
Gate
3
Drain
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N7000/D

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