Datasheet FGL40N120AN Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	FGL40N120AN	1200V NPT IGBT FGL40N120AN 1200V NPT IGBT FGL40N120AN 1200V NPT IGBT July 2007 IGBT® Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. Description Employ	Fairchild Semiconductor	igbt
2	FGL40N120AND	1200V NPT IGBT FGL40N120AND 1200V NPT IGBT February 2008 FGL40N120AND 1200V NPT IGBT tm Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • CO-PAK, IGBT with FRD : trr = 75ns (typ.) Applications Induction Heating, UPS, AC & DC motor controls a	Fairchild Semiconductor	igbt

FGL Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	FGL35N120FTD	IGBT, Insulated Gate Bipolar Transistor FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT FGL35N120FTD 1200 V, 35 A Field Stop Trench IGBT November 2013 Features • Field Stop Trench Technology • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35 A • High Input Impedance Applications • Solar Inverter	Fairchild Semiconductor	igbt
2	FGL40N120AN	1200V NPT IGBT FGL40N120AN 1200V NPT IGBT FGL40N120AN 1200V NPT IGBT July 2007 IGBT® Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. Description Employ	Fairchild Semiconductor	igbt
3	FGL40N120AND	1200V NPT IGBT FGL40N120AND 1200V NPT IGBT February 2008 FGL40N120AND 1200V NPT IGBT tm Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • CO-PAK, IGBT with FRD : trr = 75ns (typ.) Applications Induction Heating, UPS, AC & DC motor controls a	Fairchild Semiconductor	igbt
4	FGL40N150	Electrical Characteristics of the IGBT FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V	Fairchild Semiconductor	igbt
5	FGL40N150D	Electrical Characteristics of the IGBT FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V	Fairchild Semiconductor	igbt
6	FGL60N100BNTD	NPT-Trench IGBT FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Applications • UPS, Welder March 2014 General Description	Fairchild Semiconductor	igbt
7	FGL60N100D	Electrical Characteristics of IGBT FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications Features • �	Fairchild Semiconductor	igbt

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Número de pieza	Descripción	Fabricantes	PDF
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