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Datasheet BC377 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BC377Bipolar NPN Device

BC377 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products can be processe
SEME-LAB
SEME-LAB
data
2BC377(BC377 / BC378) Silicon Planar NPN

SGS-Ates
SGS-Ates
data
3BC37702.0A Switch-Mode Charger

Freescale Semiconductor Advance Information 2.0 A Switch-Mode Charger with Intelligent Power-Path for 1-Cell  Li-Ion Battery Document Number: MC32BC3770 Rev. 1.0, 10/2015 BC3770 The BC3770 is a fully programmable switching charger with dual-path output for single-cell Li-Ion and Li-Polymer b
Freescale Semiconductor
Freescale Semiconductor
data


BC3 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BC3.5Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
2BC300NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC302 TO-39 Metal Can Package NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO
CDIL
CDIL
transistor
3BC300PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

Micro Electronics
Micro Electronics
amplifier
4BC301NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC302 TO-39 Metal Can Package NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO
CDIL
CDIL
transistor
5BC301PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

Micro Electronics
Micro Electronics
amplifier
6BC302NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC302 TO-39 Metal Can Package NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO
CDIL
CDIL
transistor
7BC302Bipolar NPN Device

BC302 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 45V 5.08 (0.200) typ. IC
Seme LAB
Seme LAB
data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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