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PDF SST12LP15 Data sheet ( Hoja de datos )
| Número de pieza | SST12LP15 | |
| Descripción | High-Gain Power Amplifier | |
| Fabricantes | SST | |
| Logotipo |  |
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A Microchip Technology Company
Not recommended for new designs.
Please use SST12LP15B
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
Not Recommended for New Designs
The SST12LP15 is a high-power, high-gain power amplifier based on the highly-
reliable InGaP/GaAs HBT technology. Easily configured for high-power, high-effi-
ciency applications with superb power-added efficiency, it typically provides 35 dB
gain with 26% power added efficiency @ POUT = 24 dBm for 802.11g and 29%
power-added efficiency @ POUT = 25 dBm for 802.11b. The SST12LP15 has
excellent linearity while meeting 802.11g spectrum mask at 24+ dBm, and is
offered in 16-contact VQFN package.
Features
• High Gain:
– Typically 35 dB gain across 2.4~2.5 GHz over tempera-
ture 0°C to +80°C
• High linear output power:
– >29 dBm P1dB (Exceeding maximum rating of average
output power, never measure with CW source! Pulsed
single-tone source with <50% duty cycle is recom-
mended.)
– Meets 802.11g OFDM ACPR requirement up to 25 dBm
– Added EVM~4% up to 23.5 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 25 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~26%/290 mA @ POUT = 24 dBm for 802.11g
– ~29%/340 mA @ POUT = 25 dBm for 802.11b
• Built-in Ultra-low IREF power-up/down control
– IREF <2 mA
• Low idle current
– ~50 mA ICQ
• High-speed power-up/down
– Turn on/off time (10%~90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +80°C
– ~1 dB detector variation over 0°C to +80°C
• Low shut-down current (< 0.1 µA)
• On-chip power detection
• 25 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN (3mm x 3mm)
– Non-Pb (lead-free) packages available
Applications
• WLAN (IEEE 802.11g/b)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
©2011 Silicon Storage Technology, Inc.
www.microchip.com
DS75030A
10/11
1 page  
A Microchip Technology Company
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
Electrical Specifications
Not Recommended for New Designs
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 3 through 11 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Input power to pins 2 and 3 (PIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (POUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 dBm
Supply Voltage at pins 5, 12, 14, 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V
Reference voltage to pins 6 (VREF1) and pin 7 (VREF2) . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . “with-Pb” units1: 240°C for 3 seconds
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . “non-Pb” units: 260°C for 3 seconds
1. Certain “with-Pb” package types are capable of 260°C for 3 seconds; please consult the factory for the latest informa-
tion.
Table 2: Operating Range
Range
Industrial
Ambient Temp
-40°C to +85°C
VDD
3.3V
T2.1 75030
Table 3: DC Electrical Characteristics
Symbol
VCC
ICC
ICQ
IOFF
VREG1
VREG2
Parameter
Supply Voltage at pins 5, 12, 14, 16
Supply Current
for 802.11g, 24 dBm
for 802.11g, 25 dBm
Idle current for 802.11g to meet EVM<4% @
23dBm
Shut down current
Reference Voltage for 1st Stage, with 110
resistor
Reference Voltage for 2nd Stage, with 270
resistor
Min. Typ Max. Unit Test Conditions
3.0 3.3 4.2 V
290 mA
340 mA
50 mA
0.1 µA
2.7 2.8 2.85 V
5
2.7 2.8 2.85 V
5
T3.0 75030
©2011 Silicon Storage Technology, Inc.
5
DS75030A
10/11
5 Page 
A Microchip Technology Company
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
Typical Performance Characteristics
Not Recommended for New Designs
Test Conditions: VCC = 3.3V, TA = 25°C, F = 2.45 GHz, 54 Mbps 802.11g OFDM signal
POUT = 23 dBm
POUT = 24 dBm
Mask
14
12
10
8
6
4
2
0
5
Adde d EVM
10 15 20 25
POUT (dBm)
Figure 10:802.11g Spectrum at 23/24 dBm, DC current 240/290 mA
30
©2011 Silicon Storage Technology, Inc.
11
DS75030A
10/11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet SST12LP15.PDF ] | |
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