|
|
PDF APT25GP120B Data sheet ( Hoja de datos )
| Número de pieza | APT25GP120B | |
| Descripción | POWER MOS 7 IGBT | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de APT25GP120B (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
APT25GP120B
1200V
POWER MOS 7® IGBT
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for
very fast switching, making it ideal for high frequency, high voltage switch-
mode power supplies and tail current sensitive applications. In many cases,
the POWER MOS 7® IGBT provides a lower cost alternative to a Power
MOSFET.
• Low Conduction Loss
• 100 kHz operation @ 800V,11A
TO-247
G
C
E
C
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol Parameter
• 50 kHz operation @ 800V, 19A
• RBSOA Rated
G
E
All Ratings: TC = 25°C unless otherwise specified.
APT25GP120B
UNIT
VCES
VGE
VGEM
I C1
I C2
I CM
RBSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 25°C
Reverse Bias Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±20
±30
69
33
90
90A @ 960V
417
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX UNIT
1200
3 4.5 6
Volts
3.3 3.9
3.0
250
2500
µA
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1 page  
TYPICAL PERFORMANCE CURVES
10,000
5,000
Cies
1,000
500
100
Coes
Cres
10
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT25GP120B
100
90
80
70
60
50
40
20
0
0 200 400 600 800 1000
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10-5
0.9
0.7
0.5 Note:
t1
0.3
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Junction
temp (°C)
Power
(watts)
Case temperature(°C)
RC MODEL
0.128
0.173
0.00833F
0.171F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
182
100
50 Fmax = min(fmax1, fmax 2 )
f max 1
=
t d (on )
0.05
+ t r + t d(off )
+ tf
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 800V
10 RG = 5 Ω
fmax 2
=
Pdiss − Pcond
Eon2 + Eoff
Pdiss
=
TJ − TC
R θJC
5 10 15 20 25 30 35 40 45 50
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT25GP120B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| APT25GP120B | POWER MOS 7 IGBT | Advanced Power Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |