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PDF TPD4113K Data sheet ( Hoja de datos )
| Número de pieza | TPD4113K | |
| Descripción | Intelligent Power Device High Voltage Monolithic Silicon Power IC | |
| Fabricantes | Toshiba Semiconductor | |
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TENTATIVE
TPD4113K
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
TPD4113K
The TPD4113K is a DC brush less motor driver using high
voltage PWM control. It is fabricated by high voltage SOI process.
It contains level shift high side driver, low side driver, IGBT
outputs, FRDs and protective functions for over current and
under voltage protection circuits, and thermal shutdown circuit.
It is easy to control a DC brush less motor by just putting logic
inputs from a MPU or motor controller to the TPD4113K.
Features
• Bootstrap circuit gives simple high side supply.
• Bootstrap diodes are built in.
• A dead time can be set as a minimum of 1.4 µs and it is the
best for a Sine-wave from drive.
• 3-phase bridge output using IGBTs
• FRDs are built in
• Included over current and under voltage protection, and
thermal shutdown
• The regulator of 7V (typ.) is built in.
• Package: 23-pin HZIP
This product has a MOS structure and is sensitive to electrostatic
discharge. When handling this product, ensure that the environment
is protected against electrostatic discharge.
Weight
HZIP23-P-1.27F : 6.1 g (typ.)
HZIP23-P-1.27G : 6.1 g (typ.)
HZIP23-P-1.27H : 6.1 g (typ.)
1 2005-05-20
1 page  
TENTATIVE
Equivalent Circuit of Input Pins
Internal circuit diagram of HU, HV, HW, LU, LV, LW input pins
TPD4113K
HU/HV/HW
LU/LV/LW
5 kΩ
5 kΩ
6.5 V
6.5 V
2 kΩ
6.5 V
6.5 V
To internal circuit
Internal circuit diagram of DIAG pin
DIAG
To internal circuit
26 V
Internal circuit diagram of RS pin
Vcc
5 kΩ 5 kΩ
RS
6.5 V
2 kΩ 440 kΩ
To internal circuit
6.5 V
5 pF
5 2005-05-20
5 Page 
TENTATIVE
TPD4113K
Description of Protection Function
(1) Over current protection
This product incorporates the over current protection circuit to protect itself against over current at
startup or when a motor is locked. This protection function detects voltage generated in the current
detection resistor connected to the IS pin. When this voltage exceeds V R = 0.5 V (typ.), the IGBT
output, which is on, temporarily shuts down after a dead time , preventing any additional current
from flowing to this product. The next all “L” signal releases the shutdown state.
(2) Under voltage protection
This product incorporates the under voltage protection circuit to prevent the IGBT from operating in
unsaturated mode when the V CC voltage or the V BS voltage drops.
When the V CC power supply falls to this product internal setting (V CCUVD = 11 V typ.), all IGBT
outputs shut down regardless of the input. This protection function has hysteresis. When the
VCCUVR (= 11.5 V typ.) reaches 0.5 V higher than the shutdown voltage, this product is
automatically restored and the IGBT is turned on again by the input.
When the V BS supply voltage drops (VBSUVD = 9 V typ.), the high-side IGBT output shuts down.
When the V BSUVR (= 9.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is
turned on again by the input signal.
(3) Thermal shutdown
This product incorporates the thermal shutdown circuit to protect itself against the abnormal state
when its temperature rises excessively.
When the temperature of this chip rises due to external causes or internal heat generation and the
internal setting TSD reaches 150°C, all IGBT outputs shut down regardless of the input. This
protection function has hysteresis (∆TSD = 50°C typ.). When the chip temperature falls to TSD −
∆TSD, the chip is automatically restored and the IGBT is turned on again by the input.
Because the chip contains just one temperature detection location, when the chip heats up due to the
IGBT, for example, the differences in distance from the detection location in the IGBT (the source of
the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the
chip may rise higher than the thermal shutdown temperature when the circuit started to operate.
Safe Operating Area
0.83
0.9
0
0 450
Power supply voltage VBB (V)
Figure 1 SOA at Tj = 135°C
0
0 450
Power supply voltage VBB (V)
Figure 2 SOA at Tc = 95°C
Note 1: The above safe operating areas are Tj = 135°C (Figure 1) and Tc = 95°C (Figure 2). If the temperature
exceeds thsese, the safe operation areas reduce.
Note 2: The above safe operating areas include the over current protection operation area.
11 2005-05-20
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet TPD4113K.PDF ] | |
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