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IRFZ24A Datasheet PDF - Fairchild Semiconductor

Part Number IRFZ24A
Description ADVANCED POWER MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 

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$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175°C Operating Temperature
Lower Leakage Current: 10µA (Max.) @ VDS = 60V
Lower RDS(ON): 0.050µ (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
IRFZ24A
BVDSS = 60 V
RDS(on) = 0.07
ID = 17 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
60
17
12
68
±20
149
17
4.4
5.5
44
0.29
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
--
0.5
--
Max.
3.43
--
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation

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IRFZ24A equivalent
1&+$11(/
32:(5 026)(7
Fig 12. Gate Charge Test Circuit & Waveform
IRFZ24A
Current Regulator
Same Type
50kas DUT
12V 200nF
300nF
VGS
10V
VGS
VDS
Qgs
DUT
3mA
R1 R2
Current Sampling (IG) Current Sampling (ID)
Resistor
Resistor
Qg
Qgd
Charge
10V
Vout
Vin
RG
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDD
( 0.5 rated VDS )
Vout
90%
DUT
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Vary tp to obtain
required peak ID
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
LL
ID
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
10V
RG
tp
DUT
C
VDD
VDD
ID (t)
tp
VDS (t)
Time


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