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PDF IXFR34N80 Data sheet ( Hoja de datos )
| Número de pieza | IXFR34N80 | |
| Descripción | Single MOSFET Die Avalanche Rated | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM Power MOSFETs
ISOPLUS247TM
(Electrically Isolated Backside)
Single MOSFET Die
Avalanche Rated
IXFR 34N80
V = 800
DSS
ID25 = 28
RDS(on) = 0.24
trr ≤ 250 ns
V
A
Ω
Preliminary Data Sheet
Symbol
VDSS
V
DGR
VGS
V
GSM
ID25
I
DM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Weight
Symbol
VDSS
VGS(th)
I
GSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C (MOSFET chip capability)
TC = 25°C, Note 1
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
800 V
800 V
±20 V
±30 V
28 A
600 A
150 A
60 mJ
3J
5 V/ns
400
-55 ... +150
150
-55 ... +150
300
2500
5
W
°C
°C
°C
°C
V~
g
Test Conditions
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Notes 2, 3
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
150 V
2.0 4.0 V
±100 nA
TJ = 25°C
TJ = 125°C
100 µA
2 mA
0.24 Ω
ISOPLUS 247TM
E153432
G
D
S
Isolated backside*
G = Gate
S = Source
D = Drain
* Patent pending
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Low drain to tab capacitance(<25pF)
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Unclamped Inductive Switching (UIS)
rated
l Fast intrinsic Rectifier
Applications
l DC-DC converters
l Battery chargers
l Switched-mode and resonant-mode
power supplies
l DC choppers
l AC motor control
Advantages
l Easy assembly
l Space savings
l High power density
© 2000 IXYS All rights reserved
98674A (02/00)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFR34N80.PDF ] | |
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