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Número de pieza | NTD4809NH | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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NTD4809NH
Power MOSFET
30 V, 58 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (RqJA) (Note 1)
Power Dissipation
(RqJA) (Note 1)
Continuous Drain
Current (RqJA) (Note 2)
Power Dissipation
(RqJA) (Note 2)
Continuous Drain
Current (RqJC)
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
VDSS
VGS
ID
PD
ID
PD
ID
30
"20
11.5
9.0
2.0
9.0
7.0
1.3
58
45
V
V
A
W
A
W
A
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Pulsed Drain Current tp=10ms TA = 25°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
PD
IDM
IDmaxPkg
TJ, Tstg
52
130
45
−55 to
175
W
A
A
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
43 A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 1.0 mH, IL(pk) = 15 A, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
EAS 112.5 mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
9.0 mW @ 10 V
14 mW @ 4.5 V
D
ID MAX
58 A
N−Channel
G
S
4
4
12
3
DPAK
CASE 369C
(Bent Lead)
STYLE 2
1
2
3
3 IPAK
IPAK
CASE 369AD CASE 369D
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4809NH= Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 1
1
Publication Order Number:
NTD4809NH/D
1 page NTD4809NH
TYPICAL PERFORMANCE CURVES
2000
1500
TJ = 25°C
Ciss
1000
500
0
0
Coss
Crss
5 10 15 20 25
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
30
100
tr
td(off)
10
td(on)
tf
1
1
VDD = 15 V
ID = 30 A
VGS = 11.5 V
10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
100
10 ms
100 ms
10 1 ms
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
dc
1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
12
QT
10
VGS
8
6
4 Qgs
Qgd
2
0
0 5 10
VDD = 15 V
0 V ≤ VGS ≤ 11.5 V
ID = 30 A
TJ = 25°C
15 20 25 30
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage
vs. Total Charge
30
VGS = 0 V
25 TJ = 25°C
20
15
10
5
0
0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
120
ID = 15 A
100
80
60
40
20
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet NTD4809NH.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTD4809N | Power MOSFET ( Transistor ) | ON Semiconductor |
NTD4809NH | Power MOSFET ( Transistor ) | ON Semiconductor |
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