BF1206 Datasheet PDF - NXP Semiconductors
Part Number | BF1206 | |
Description | Dual N-channel dual-gate MOS-FET | |
Manufacturers | NXP Semiconductors | |
Logo | ||
There is a preview and BF1206 download ( pdf file ) link at the bottom of this page. Total 21 Pages |
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DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1206
Dual N-channel dual-gate
MOS-FET
Product specification
2003 Nov 17
|
|
Philips Semiconductors
Dual N-channel dual-gate MOS-FET
Product specification
BF1206
DYNAMIC CHARACTERISTICS AMPLIFIER a
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 18 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-ss
Cig2-ss
Coss
Crss
NF
Gtr
Xmod
forward transfer admittance pulsed; Tj = 25 °C
33 38 48
input capacitance at gate 1 f = 1 MHz
− 2.4 2.9
input capacitance at gate 2 f = 1 MHz
− 3.2 −
output capacitance
f = 1 MHz
− 1.1 −
reverse transfer capacitance f = 1 MHz
− 15 30
noise figure
f = 11 MHz; GS = 20 mS; BS = 0
−3−
f = 400 MHz; YS = YS opt
− 1.3 1.9
f = 800 MHz; YS = YS opt
− 1.6 2.2
power gain
f = 200 MHz; GS = 2 mS; BS = BS opt;
GL = 0.5 mS; BL = BL opt; note 1
−
35 −
f = 400 MHz; GS = 2 mS; BS = BS opt;
GL = 1 mS; BL = BL opt; note 1
−
30 −
f = 800 MHz; GS = 3.3 mS; BS = BS opt;
GL = 1 mS; BL = BL opt; note 1
−
23 −
cross-modulation
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 2
at 0 dB AGC
90 −
−
at 10 dB AGC
− 92 −
at 40 dB AGC
102 105 −
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBµV
dBµV
dBµV
Notes
1. Calculated from measured s-parameters.
2. Measured in Fig.35 test circuit.
2003 Nov 17
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BF1206 electronic component. |
Information | Total 21 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ BF1206.PDF Datasheet ] |
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