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What is BF1206?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "Dual N-channel dual-gate MOS-FET".


BF1206 Datasheet PDF - NXP Semiconductors

Part Number BF1206
Description Dual N-channel dual-gate MOS-FET
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1206
Dual N-channel dual-gate
MOS-FET
Product specification
2003 Nov 17

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BF1206 equivalent
Philips Semiconductors
Dual N-channel dual-gate MOS-FET
Product specification
BF1206
DYNAMIC CHARACTERISTICS AMPLIFIER a
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 18 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-ss
Cig2-ss
Coss
Crss
NF
Gtr
Xmod
forward transfer admittance pulsed; Tj = 25 °C
33 38 48
input capacitance at gate 1 f = 1 MHz
2.4 2.9
input capacitance at gate 2 f = 1 MHz
3.2
output capacitance
f = 1 MHz
1.1
reverse transfer capacitance f = 1 MHz
15 30
noise figure
f = 11 MHz; GS = 20 mS; BS = 0
3
f = 400 MHz; YS = YS opt
1.3 1.9
f = 800 MHz; YS = YS opt
1.6 2.2
power gain
f = 200 MHz; GS = 2 mS; BS = BS opt;
GL = 0.5 mS; BL = BL opt; note 1
35
f = 400 MHz; GS = 2 mS; BS = BS opt;
GL = 1 mS; BL = BL opt; note 1
30
f = 800 MHz; GS = 3.3 mS; BS = BS opt;
GL = 1 mS; BL = BL opt; note 1
23
cross-modulation
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 2
at 0 dB AGC
90
at 10 dB AGC
92
at 40 dB AGC
102 105
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBµV
dBµV
dBµV
Notes
1. Calculated from measured s-parameters.
2. Measured in Fig.35 test circuit.
2003 Nov 17
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BF1206 electronic component.


Information Total 21 Pages
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