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PDF DIM200MKS12-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM200MKS12-A000 | |
| Descripción | Igbt Modules - Chopper | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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Replaces November 2002, issue DS5552-1.2
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
APPLICATIONS
I Choppers
I Motor Controllers
I Induction Heating
I Resonant Converters
I Power Supplies
DIM200MKS12-A000
DIM200MKS12-A000
IGBT Chopper Module
DS5552-1.2 November 2002
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
1(K,E)
2(A)
3(C)
9(C1)
4(G1)
5(E1)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200MKS12-A000 is a 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module configured with the upper arm of the bridge
controlled. The module incorporates a high current rated
freewheel diode. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200MKS12-A000
Note: When ordering, please use the whole part number.
Fig. 1 Chopper circuit diagram - upper arm controlled
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
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ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise
case
Symbol
Parameter
td(off)
tf
E
OFF
td(on)
tr
EON
Q
g
Qrr
Irr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
t
d(off)
tf
EOFF
td(on)
t
r
EON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM200MKS12-A000
Test Conditions
I = 200A
C
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
IF = 200A, VR = 600V,
dIF/dt = 2100A/µs
Min. Typ. Max. Units
- 600 - ns
- 50 - ns
- 20 - mJ
- 240 - ns
- 95 - ns
- 25 - mJ
- 2 - µC
- 30 - µC
- 125 -
A
- 13 - mJ
Test Conditions
IC = 200A
VGE = ±15V
V = 600V
CE
RG(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
I = 200A, V = 600V,
FR
dIF/dt = 1900A/µs
Min. Typ. Max. Units
- 800 - ns
- 70 - ns
- 27 - mJ
- 385 - ns
- 110 - ns
- 40 - mJ
- 50 - µC
- 140 -
A
- 20 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet DIM200MKS12-A000.PDF ] | |
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