DIM200MHS12-A000 Datasheet PDF - Dynex Semiconductor
Part Number | DIM200MHS12-A000 | |
Description | Igbt Modules - Half Bridge | |
Manufacturers | Dynex Semiconductor | |
Logo | ||
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DIM200MHS12-A000
DIM200MHS12-A000
Half Bridge IGBT Module
Replaces June 2002, version DS5535-2.1
DS5535-3.0 March 2003
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I Inverters
I Motor Controllers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200MHS12-A000 is a half bridge switch 1200V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
11(C2)
1(E1C2)
9(C1)
2(E2)
6(G2)
7(E2)
3(C1)
5(E1)
4(G1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM200MHS12-A000
Note: When ordering, please use the whole part number.
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise
case
Symbol
Parameter
td(off)
tf
E
OFF
td(on)
tr
EON
Q
g
Qrr
Irr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
t
d(off)
tf
EOFF
td(on)
t
r
EON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM200MHS12-A000
Test Conditions
I = 200A
C
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
IF = 200A, VR = 600V,
dIF/dt = 2100A/µs
Min. Typ. Max. Units
- 600 - ns
- 50 - ns
- 20 - mJ
- 240 - ns
- 95 - ns
- 25 - mJ
- 2 - µC
- 30 - µC
- 125 -
A
- 13 - mJ
Test Conditions
IC = 200A
VGE = ±15V
V = 600V
CE
RG(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
I = 200A, V = 600V,
FR
dIF/dt = 1900A/µs
Min. Typ. Max. Units
- 800 - ns
- 70 - ns
- 27 - mJ
- 385 - ns
- 110 - ns
- 40 - mJ
- 50 - µC
- 140 -
A
- 20 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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