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What is IXBH42N170A?

This electronic component, produced by the manufacturer "IXYS Corporation", performs the same function as "(IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor".


IXBH42N170A Datasheet PDF - IXYS Corporation

Part Number IXBH42N170A
Description (IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor
Manufacturers IXYS Corporation 
Logo IXYS Corporation Logo 


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Advance Technical Information
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH 42N170A
IXBT 42N170A
VCES = 1700 V
IC25 = 42 A
VCE(sat) = 6.0 V
tfi = 50 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
1700
1700
VGES
VGEM
Continuous
Transient
±20
±30
IC25 TC = 25°C
IC90 TC = 90°C
ICM TC = 25°C, 1 ms
42
21
120
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10
Clamped inductive load
ICM =
90
VCES = 1350
TSC
(SCSOA)
VGE = 15 V, VCES = 1200V, TJ = 125°C
RG = 10 non repetitive
10
PC TC = 25°C
350
TJ -55 ... +150
TJM 150
Tstg -55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
350
260
V
V
V
V
A
A
A
A
V
µs
W
°C
°C
°C
°C
°C
Md
Weight
Mounting torque (M3)
TO-247 AD
TO-268
1.13/10Nm/lb.in.
6g
4g
TO-268 (IXBT)
G
E
TO-247 AD (IXBH)
(TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z High Blocking Voltage
z JEDEC TO-268 surface and
JEDEC TO-247 AD
z Fast switching
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Molding epoxies meet UL 94 V-0
flammability classification
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
IC = 750 µA, VCE = VGE
VCE = 0.8 VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
TJ = 125°C
1700
2.5
V
5.5 V
50 µA
1.5 mA
±100 nA
4.5 6.0 V
5.0 V
Applications
z AC motor speed control
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z Substitutes for high voltage MOSFETs
Advantages
z Lower conduction losses than MOSFETs
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2002 IXYS All rights reserved
98939 (7/02)


Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
IXBH42N170The function is (IXBH42N170 / IXBT42N170) High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor. IXYS CorporationIXYS Corporation
IXBH42N170AThe function is (IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor. IXYS CorporationIXYS Corporation

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