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PDF EE-SX1018 Data sheet ( Hoja de datos )

Número de pieza EE-SX1018
Descripción Photomicrosensor
Fabricantes Omron Electronics 
Logotipo Omron Electronics Logotipo



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EE-SX1018
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Four, C0.3
0.5±0.05
Optical
axis
Four, 0.5
Four, 0.25
Cross section AA
Internal Circuit
K
C
AE
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
3 mm max.
3 t mm v 6
6 t mm v 10
10 t mm v 18
18 t mm v 30
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
Photomicrosensor
(Through-beam)
Features
Compact model with a 2-mm-wide slot.
PCB mounting type.
High resolution with a 0.5-mm-wide slit.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rated
value
Emitter
Forward current IF
50 mA
(see note 1)
Pulse forward
current
IFP
1A
(see note 2)
Receiver
Reverse voltage
Collector–Emitter
voltage
VR
VCEO
4V
30 V
Emitter–Collector VECO
voltage
---
Collector current IC
Collector
dissipation
PC
20 mA
100 mW
(see note 1)
Ambient
Operating
temperature
Topr –25°C to
85°C
Storage
Tstg –30°C to
100°C
Soldering temperature
Tsol 260°C
Note:
1. Refer to the temperature rating chart if the ambient
temperature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency
of 100 Hz.
3. Complete soldering within 10 seconds.
Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Receiver
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Symbol
VF
IR
λP
IL
ID
ILEAK
VCE (sat)
Value
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
Rising time
Falling time
Peak spectral sensitivity
wavelength
λP
tr
tf
850 nm typ.
4 µs typ.
4 µs typ.
Condition
IF = 30 mA
VR = 4 V
IF = 20 mA
IF = 20 mA, VCE = 10 V
VCE = 10 V, 0 ȏx
---
IF = 20 mA, IL = 0.1 mA
VCE = 10 V
VCC = 5 V, RL = 100 , IL = 5 mA
VCC = 5 V, RL = 100 , IL = 5 mA
38

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