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What is FZ1600R12KE3?

This electronic component, produced by the manufacturer "eupec GmbH", performs the same function as "IGBT-Module".


FZ1600R12KE3 Datasheet PDF - eupec GmbH

Part Number FZ1600R12KE3
Description IGBT-Module
Manufacturers eupec GmbH 
Logo eupec GmbH Logo 


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Total 9 Pages



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Technische Information / technical information
IGBT-Module
IGBT-Modules
FZ1600R12KE3
Höchstzulässige Werte / maximum rated values
vorläufige Daten
preliminary data
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung
collector emitter voltage
Tvj= 25°C
Kollektor Dauergleichstrom
DC collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Tc= 80°C
Tc= 25°C
tp= 1ms, Tc= 80°C
Gesamt Verlustleistung
total power dissipation
Tc= 25°C;Transistor
Gate Emitter Spitzenspannung
gate emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
tp= 1ms
Grenzlastintegral
I²t value
VR= 0V, tp= 10ms, Tvj= 125°C
Isolations Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
VCES
IC, nom
IC
ICRM
Ptot
VGES
IF
IFRM
I²t
VISOL
1200
1600
2300
3200
7,8
+/- 20
1600
3200
300
2,5
V
A
A
A
kW
V
A
A
k A²s
kV
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Kollektor Emitter Sättigungsspannung
collector emitter satration voltage
IC= 1600A, VGE= 15V, Tvj= 25°C,
IC= 1600A, VGE= 15V, Tvj= 125°C,
Gate Schwellenspannung
gate threshold voltage
IC= 64mA, VCE= VGE, Tvj= 25°C,
Gateladung
gate charge
VGE= -15V...+15V;VCE= ...V
Eingangskapazität
input capacitance
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Rückwirkungskapazität
reverse transfer capacitance
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Kollektor Emitter Reststrom
collector emitter cut off current
VCE=1200V, VGE= 0V, Tvj= 25°C,
Gate Emitter Reststrom
gate emitter leakage current
VCE= 0V, VGE= 20V, Tvj= 25°C
min. typ. max.
VCEsat
-
-
1,7 2,15
2 t.b.d.
VGE(th)
5
5,8 6,5
V
V
V
QG - 15,4 - µC
Cies - 115 - nF
Cres - 5,4 - nF
ICES
-
- 5 mA
IGES
-
- 400 nA
prepared by: MOD-D2; Mark Münzer
approved: SM TM; Christoph Lübke
date of publication: 2002-07-29
revision: 2.0
1 (8)
DB_FZ1600R12KE3_2.0.xls
2002-07-29

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FZ1600R12KE3 equivalent
Technische Information / technical information
IGBT-Module
IGBT-Modules
FZ1600R12KE3
Übertragungscharakteristik (typisch)
transfer characteristic (typical)
vorläufige Daten
preliminary data
IC= f(VGE)
VCE= 20V
3200
2800
2400
2000
1600
1200
800
400
0
5
Tvj=25°C
Tvj=125°C
6 7 8 9 10 11 12 13
VGE [V]
Durchlasskennlinie der Inversdiode (typisch)
forward caracteristic of inverse diode (typical)
IF= f(VF)
3200
2800
2400
2000
Tvj = 25°C
Tvj = 125°C
1600
1200
800
400
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0
VF [V]
5 (8)
DB_FZ1600R12KE3_2.0.xls
2002-07-29


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
FZ1600R12KE3The function is IGBT-Module. eupec GmbHeupec GmbH

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