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Número de pieza | AOL1400 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
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AOL1400
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1400 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity and
good body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core power
conversion. Standard product AOL1400 is Pb-free
(meets ROHS & Sony 259 specifications). AOL1400L
is a Green Product ordering option. AOL1400 and
AOL1400L are electrically identical.
Features
VDS (V) = 30V
ID = 85A
(VGS = 10V)
RDS(ON) < 4.5mΩ (VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 4.5V)
Ultra SO-8TM Top View
D
S
G
Fits SOIC8
footprint !
Bottom tab
connected to
drain
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current B
TC=25°C G
TC=100°C B
ID
Pulsed Drain Current
IDM
Continuous Drain
Current G
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
85
70
200
17
13
30
145
100
50
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
21
48
1
Max
25
60
1.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1 page AOL1400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 120
TA=25°C
100
80
80
60
60
40
40
20
20
0
0.00001
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
100 100
80 80
60 60
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
40
20
0
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
100
D=Ton/T
10 TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Alpha & Omega Semiconductor, Ltd.
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AOL1400.PDF ] |
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