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PDF AO3703 Data sheet ( Hoja de datos )
| Número de pieza | AO3703 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO3703
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO3703 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO3703 is Pb-free (meets ROHS & Sony
259 specifications). AO3703L is a Green Product ordering
option. AO3703 and AO3703L are electrically identical.
Features
VDS (V) = -20V
ID = -2.7 A (VGS = -10V)
RDS(ON) < 97mΩ (VGS = -4.5V)
RDS(ON) < 130mΩ (VGS = -2.5V)
RDS(ON) < 190mΩ (VGS = -1.8V)
SCHOTTKY
SOT-23-5
Top View
G 15 D
S2
A 34 K
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
Pulsed Drain Current B
TA=25°C
TA=70°C
ID
IDM
Schottky reverse voltage
VKA
Continuous Forward Current A
Pulsed Forward Current B
TA=25°C
TA=70°C
IF
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
DK
SA
MOSFET
-20
±8
-2.7
-2.1
-10
1.14
0.72
-55 to 150
Typ
80.3
117
58.5
Schottky
20
2
1
10
0.92
0.59
-55 to 150
Max
110
150
80
Units
V
V
A
V
A
W
°C
Units
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO3703.PDF ] | |
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