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PDF GA150KS61U Data sheet ( Hoja de datos )
| Número de pieza | GA150KS61U | |
| Descripción | Low Side Switch Chopper Module Ultra-Fast Speed IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD -94346
GA150KS61U
Low Side Switch Chopper Module
Ultra-FastTM Speed IGBT
3 VCES = 600V
1
6 VCE(on) typ. = 1.7V
7 2 @VGE = 15V, IC = 150A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
150
300
300
300
±20
2500
440
230
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
Typ.
—
—
0.1
—
—
200
Max.
0.28
0.35
—
4.0
3.0
—
Units
°C/W
N.m
g
1
11/06/01
1 page  
30
VCC= 360V
VGE = 15V
TJ = 125°C
25 I C= 1500A
20
GA150KS61U
100
IC = 300A
IC = 150A
10 IC = 75A
15
10
0
10 20 30 40
RG, Gate Resistance (Ω)
50
Fig. 8 - Typical Switching Losses vs. Gate
Resistance
RG1 = 27Ω, RG2 = 0Ω
VGE = 15V
VCC= 360V
1
0 20 40 60
80
100 120 140
TJ, Junction Temperature (°C)
160
Fig. 9 - Typical Switching Losses vs.
Junction Temperature
50
RG1 = 27Ω, RG2 = 0Ω
TJ = 150°C
40 VGE = 15V
VCC= 360V
30
20
10
0
0 50 100 150 200 250 300
IC, Collector Current (A)
Fig. 10 - Typical Switching Losses vs.
Collector-to-Emitter Current
www.irf.com
400
VGE = 20V
TJ = 125°
VCE measured at terminal (Peak Voltage)
300
200
SAFE OPERATING AREA
100
0
0
100 200 300 400 500 600 700
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Reverse Bias SOA
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet GA150KS61U.PDF ] | |
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